Three-dimensional IR imaging with uncooled GaN photodiodes using nondegenerate two-photon absorption.

نویسندگان

  • Himansu S Pattanaik
  • Matthew Reichert
  • David J Hagan
  • Eric W Van Stryland
چکیده

We utilize the recently demonstrated orders of magnitude enhancement of extremely nondegenerate two-photon absorption in direct-gap semiconductor photodiodes to perform scanned imaging of three-dimensional (3D) structures using IR femtosecond illumination pulses (1.6 µm and 4.93 µm) gated on the GaN detector by sub-gap, femtosecond pulses. While transverse resolution is limited by the usual imaging criteria, the longitudinal or depth resolution can be less than a wavelength, dependent on the pulsewidths in this nonlinear interaction within the detector element. The imaging system can accommodate a wide range of wavelengths in the mid-IR and near-IR without the need to modify the detection and imaging systems.

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عنوان ژورنال:
  • Optics express

دوره 24 2  شماره 

صفحات  -

تاریخ انتشار 2016